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| NTE2528 (NPN) & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch Features: D High Voltage and High Current Capacity D Fast Switching Time Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance NTE2528 NTE2529 Collector-Emitter Saturation Voltage NTE2528 NTE2529 VCE(sat) IC = 500mA, IB = 50mA Symbol ICBO IEBO hFE fT Cob Test Conditions VCB = 120V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 100mA VCE = 5V, IC = 10A VCE = 10V, IC = 50mA VCB = 10V, f = 1MHz Min - - 100 80 - - - - - Typ - - - - 120 12 22 0.13 0.2 Max Unit 1.0 1.0 400 - - - - 0.5 0.45 MHz pF pF V V A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Turn-On Time Storage Time NTE2528 NTE2529 Fall Time NTE2528 NTE2529 tf Symbol VBE(sat) Test Conditions IC = 500mA, IB = 50mA Min - 180 160 6 - - - - - Typ 0.85 - - - 60 1.2 0.7 80 50 Max Unit 1.2 - - - - - - - - V V V V ns ns ns ns ns V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10A, IC = 0 ton tstg VCC = 100V, VBE = -5V, 10IB1 = -10IB2 = IC = 700mA, Pulse Width = 20s, Duty Cycle 1%, Note 1 Note 1. For NTE2529, the polarity is reversed. .256 (6.5) .197 (5.0) .059 (1.5) .090 (2.3) .002 (0.5) .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3) |
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